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  Datasheet File OCR Text:
 SMBTA63, SMBTA64
PNP Silicon Darlington Transistors High collector current High DC current gain
3

2 1
VPS05161
Type SMBTA63 SMBTA64
Maximum Ratings Parameter
Marking s2U s2V 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 30 30 10 500 800 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 81 C Junction temperature Storage temperature
mA A mA mW C
Thermal Resistance Junction - soldering point 1) RthJS
210
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBTA63, SMBTA64
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics VBEsat 2 SMBTA63 SMBTA64 SMBTA63 SMBTA64 VCEsat hFE 5000 10000 10000 20000 1.5 IEBO 100 ICBO 10 ICBO 100 V(BR)EBO 10 V(BR)CBO 30 V(BR)CES 30 typ. max.
Unit
V
nA A nA -
V
Transition frequency I C = 50 mA, V CE = 5 V, f = 20 MHz
fT
125
-
-
MHz
1) Pulse test: t 300s, D = 2%
2
Nov-30-2001
SMBTA63, SMBTA64
Total power dissipation Ptot = f(TS)
Collector-base capacitance CCB = f (VCBO Emitter-base capacitance CEB = f (VEBO)
BC 846...850 EHP00361
400
mW
320 280
C CB0 ( C EB0 )
12 pF 10
P tot
8
240 200 160
C EB
6
4
120 80 40 0 0
C CB
2
15
30
45
60
75
90 105 120
C 150 TS
0 10 -1
5
10 0
V VCB0
10 1 (VEB0 )
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max Ptot DC
tp D= T tp T
EHP00362
Transition frequency fT = f (IC) VCE = 5V
10 3 MHz
EHP00363
fT
5
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 0 10 -6
10
-5
10
-4
10
-3
10
-2
s tp
10
0
10 1 10 -1
5 10 0
5
10 1
mA
10 2
C
3
Nov-30-2001
SMBTA63, SMBTA64
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 20
10 2
EHP00364
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20
10 3
EHP00215
C mA
100 C 25 C -50 C
C
mA 150 C 25 C -50 C
10 2 5
10 1 5
10 1 5
10 0 5
10 0 5
10 -1
10 -1
0
0.2
0.4
0.6
0.8
V
1.2
0
0.2
0.4
0.6
V
0.8
V BEsat
V CEsat
Collector cutoff current ICBO = f (TA ) VCB = 30V
10 4
EHP00415
DC current gain hFE = f (I C) VCE = 5V
10 3
EHP00365
CB0
nA max
h FE 5
100 C 25 C
10 3 5
10 2
typ
-50 C
5
10 5
2
10 1
10 5
1
5
10 0
0
50
100
C TA
150
10 0 10 -2
5 10 -1
5 10 0
5 10 1
mA 10 2
C
4
Nov-30-2001


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